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- Ph.D. in Materials Science, May 2008. Vanderbilt University, Nashville, Tennessee, USA.
- M.S. degree in Materials Science, December 2005. Vanderbilt University, Nashville, Tennessee, USA.
- D.E.A. (M.S.) degree in Physics, June 2003. Université Libre de Bruxelles, Brussels, Belgium.
- B.S. degree in Physics, September 2002. Université Libre de Bruxelles, Brussels, Belgium.
Grande Distinction
- Civil Engineer Candidate degree, September 2000. Université Libre de Bruxelles, Brussels, Belgium.
One of the most famous photos in the history of physics captures the illustrious participants at the fifth Solvay Conference in Brussels, October 1927. Twenty-nine physicists, the main quantum theorists of the day, came together to discuss the topic “Electrons and Photons”. Seventeen of the 29 attendees were or became Nobel Prize winners.
- Electrical properties of silicon carbide (SiC) interfaces. Overview.
- Electrical and optical properties of vanadium dioxide (VO2) thin films. Overview.
Electronic properties and reliability of the SiO2/SiC interface
Silicon carbide gate oxide and interface properties.
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J. Rozen, S. Dhar, S. Wang, V. V. Afanas'ev, S. T. Pantelides, J. R. Williams and L. C. Feldman, Impact of nitridation on negative and positive charge buildup in SiC gate oxides.
Mater. Sci. Forums 600-603, 803 (2009).
Available online ©Trans Tech Publications
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J. Rozen, S. Dhar, S. K. Dixit, V. V. Afanas'ev, F. O. Roberts, H. L. Dang, S. Wang, S. T. Pantelides, J. R. Williams and L. C. Feldman, Increase in oxide hole trap density associated with nitrogen incorporation at the SiO2 / SiC interface. J. Appl. Phys. 103, 124513 (2008).
Download PDF ©American Institute of Physics
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E. A. Ray, J. Rozen, S. Dhar, J. R. Williams and L. C. Feldman, Pressure dependence of SiO2 growth kinetics and electrical properties on SiC. J. Appl. Phys. 103, 023522 (2008).
Download PDF Erratum ©American Institute of Physics
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J. Rozen, S. Dhar, S. T. Pantelides, L. C. Feldman, S. Wang, J. R. Williams and V. V. Afanas'ev, Suppression of interface state generation upon electron injection in nitrided oxides grown on 4H-SiC. Appl. Phys. Lett. 91, 153503 (2007).
Download PDF ©American Institute of Physics.
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S. K. Dixit, S. Dhar, J. Rozen, S. Wang, R. D. Schrimpf, D. M. Fleetwood, S. T. Pantelides, J. R. Williams and L. C. Feldman, Total dose radiation response of nitrided and non-nitrided SiO2/4H-SiC MOS capacitors. IEEE Trans. Nucl. Sci. 53 (6), 3687 (2006).
Download PDF ©IEEE
Properties of nanocrystalline vanadium dioxide.
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J. Rozen, R. Lopez, R. F. Haglund and L. C. Feldman, Two-dimensional current percolation in nanocrystalline vanadium dioxide films. Appl. Phys. Lett. 88 (8), 081902 (2006).
Download PDF ©American Institute of Physics.
Nuclear Magnetic Resonance: dynamics in Fullerene · 2 Ferrocene solvate.
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J. Rozen, R. Ceolin H. Szwarc and F. Masin, Dynamical model for the C5H5 cycles in the
C60·2 Fe(C5H5)2 solvate, Phys. Rev. B 70, 144206 (2004).
Download PDF ©American Physical Society.
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J. Rozen, R. Ceolin J. L. Tamarit, H. Szwarc and F. Masin, Solid State 13C and 1H NMR Investigations on C60 · 2 ferrocene, AIP Conference Proceedings -- October 20, 2003 -- Volume 685, Issue 1, p. 19.
Download PDF ©American Institute of Physics.
These articles can only be read. Any other use requires prior permission of the author and of the publisher.
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